Neuromorphic computing memristors have emerged as promising candidates for constructing low-power consumption electronic textiles due to their intrinsic interwoven properties. Researchers from various institutions have developed a textile memristor network of Ag/MoS2/HfAlOx/carbon nanotube with reconfigurable characteristics, capable of achieving both nonvolatile synaptic plasticity and volatile neuron functions.
The reconfigurable textile memristor network consists of top and bottom layers with an interwoven structure that acts as artificial synapses and neurons, respectively. Each basic reconfigurable memristor unit comprises a heterostructure of MoS2 nanosheets and HfAlOx film, constructed via electrophoretic deposition and atomic layer deposition.
The reconfigurable textile network exhibits nonvolatile memory and volatile threshold-switching characteristics, which can switch between the two modes via controlling compliance current. The top-layer textile memristor with a nonvolatile behavior acts as artificial synapse, while the soma of post-neuron can effectively integrate diverse information acquired from different pre-neurons and form the next layer, emulated by the reconfigurable bottom-layer memristor.