Bilayer graphene, consisting of two layers of graphene, is a promising material for FETs due to its unique electronic behavior. In isolation, bilayer graphene is still gapless, but any external perturbation, such as the application of an electric field or the placement of the bilayer on a substrate, can make the two layers inequivalent and alter the band structure. Recent experiments have revealed that an applied electric field can create a bandgap in bilayer graphene, making it suitable for FETs.